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Same model may have multiple batches, images only for reference.
PTFB193404F V1 R250
Same model may have multiple batches, images only for reference.

PTFB193404F V1 R250

Part No PTFB193404F V1 R250
Manufacturer Infineon Technologies
Catalog OEM Parts (O - R)
Description Trans Rf Mosfet N-ch 65V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 2.6 A
Drain to Source Breakdown Voltage 65 V
Element Configuration Dual
Frequency 1.99 GHz
Gain 19 dB
Gate to Source Voltage (Vgs) 10 V
Maximum Operating Temperature 150 °C
Output Power 100 W
RoHS Compliant
Win Source Part Number 999792-PTFB193404F V1 R250
Categories OEM Parts(O-R)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian PTFB193404F V1 R250 CAD Model

Description

The Infineon Technologies PTFB193404F V1 R250 is a dual element configuration RF power transistor that operates at a frequency of 1.99 GHz.

  • Frequency: 1.99 GHz
  • Gain: 19 dB
  • Output Power: Up to 100 W
  • Maximum Drain to Source Breakdown Voltage: 65 V
  • Gate to Source Voltage: 10 V
  • RoHS: Compliant
  • Continuous Drain Current: 2.6 A

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