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PTVA122501EC

Part No PTVA122501EC
Manufacturer Infineon Technologies
Catalog RFFETs
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family RFFETs
Manufacturer Infineon Technologies
Win Source Part Number 354473-PTVA122501EC
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PTVA122501EC CAD Model

Description

The PTVA122501EC is a 12 V, 250 W LDMOS power transistor designed for high-performance pulsed avionics applications, manufactured by Infineon Technologies. This transistor is specifically optimized for use in Mode S Enhanced Surveillance, TCAS, DME, and JTIDS systems.

Applications

  • Mode S Enhanced Surveillance Systems
  • TCAS (Traffic Collision Avoidance System)
  • DME (Distance Measuring Equipment)
  • JTIDS (Joint Tactical Information Distribution System)
  • Avionics Pulsed Radar Applications

Features

  • High Output Power: Delivers 250 W of pulsed output power at 12V.
  • High Gain: Offers significant power amplification, reducing the drive power requirements.
  • High Efficiency: Provides efficient power conversion, minimizing heat dissipation.
  • Rugged Design: Designed to withstand harsh operating conditions typical in avionics environments.
  • Internally Matched: Simplifies the design and integration process by providing an internally matched device.
  • LDMOS Technology: Utilizes LDMOS technology for superior performance and reliability.

Benefits

  • Improved System Performance: High output power and gain enhance the range and sensitivity of avionics systems.
  • Reduced System Size and Weight: High efficiency minimizes the need for bulky heat sinks.
  • Simplified Design: Internal matching reduces the complexity of the RF circuit design.
  • Enhanced Reliability: Rugged design ensures reliable operation in demanding avionics environments.
  • Cost-Effective Solution: Optimized for pulsed avionics applications, providing a cost-effective solution.

Additional Details

The PTVA122501EC is specifically designed to meet the stringent requirements of avionics applications, offering high performance, reliability, and efficiency. It is ideal for use in Mode S transponders, TCAS systems, DME equipment, and JTIDS terminals.

Technical Specifications (Typical):

  • Frequency Range: 1.2 - 1.4 GHz
  • Supply Voltage: 12 V
  • Output Power: 250 W (Pulsed)
  • Gain: 14 dB
  • Efficiency: 50%
  • Pulse Width: Up to 10 μs
  • Duty Cycle: Up to 10%

This transistor is crucial for enhancing the performance and reliability of modern avionics systems, enabling safer and more efficient air travel.

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