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Same model may have multiple batches, images only for reference.
SGB06N60ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SGB06N60ATMA1

Part No SGB06N60ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SGB06N60ATMA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 12 A
Current - Collector Pulsed (Icm) 24 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 6A
Power - Max 68 W
Switching Energy 215µJ
Input Type Standard
Gate Charge 32 nC
Td (on/off) @ 25°C 25ns/220ns
Test Condition 400V, 6A, 50Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Base Product Number SGB06N
Other Names SGB06N60,SP000011980,SGB06N60,SGB06N60ATMA1TR
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277435-SGB06N60ATMA1
Ultra Librarian 3D Model Ultra Librarian SGB06N60ATMA1 CAD Model

Description

The SGB06N60ATMA1 is an NPT IGBT transistor from Infineon Technologies.

  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Power - Max: 68W
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
  • Switching Energy: 215μJ
  • Gate Charge: 32 nC
  • Temperature Range: -55°C ~ 150°C (TJ)
  • REACH Regulations: Unaffected
  • Great Choice For: IGBT applications that require low power.

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