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Same model may have multiple batches, images only for reference.
SIGC100T65R3EX1SA2 Real Image
Same model may have multiple batches, images only for reference.

SIGC100T65R3EX1SA2

Part No SIGC100T65R3EX1SA2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC100T65R3EX1SA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Series TrenchStop™
Package Bulk
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 200 A
Current - Collector Pulsed (Icm) 600 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A
Input Type Standard
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Base Product Number SIGC100
Other Names 448-SIGC100T65R3EX1SA2,SP000691764
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
HTSUS 0000.00.0000
Win Source Part Number 1277412-SIGC100T65R3EX1SA2
Ultra Librarian 3D Model Ultra Librarian SIGC100T65R3EX1SA2 CAD Model

Description

The Infineon Technologies SIGC100T65R3EX1SA2 is a TrenchStop™ IGBT designed for high-power applications.

  • Collector-Emitter Breakdown Voltage: 650V
  • Maximum Collector Current: 200A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
  • Supply and Demand Status: Limited

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