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Same model may have multiple batches, images only for reference.
SPA07N60CFDXKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPA07N60CFDXKSA1

Part No SPA07N60CFDXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 6.6A TO220-FP
Datasheet
SPA07N60CFDXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 300μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 109949-SPA07N60CFDXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPA07N60CFDXKSA1 CAD Model

Description

The Infineon Technologies 109949-SPA07N60CFDXKSA1 is an N-channel MOSFET with a power dissipation of 32W (Tc).

  • Category: Discrete Semiconductor Products
  • Status: Not for new designs
  • Supply and Demand Status: Balanced
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 700 mOhm @ 4.6A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.4842 $58.3578
22+ $5.3199 $117.0378
34+ $5.1536 $175.2224
47+ $4.9873 $234.4031
60+ $4.8221 $289.3260
81+ $4.3232 $350.1792
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Availability: 5,270 pieces
MOQ: 9 pcs
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