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Same model may have multiple batches, images only for reference.
SPA07N65C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPA07N65C3XKSA1

Part No SPA07N65C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO-220
Datasheet
SPA07N65C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 350μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 100445-SPA07N65C3XKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPA07N65C3XKSA1 CAD Model

Description

The Infineon Technologies SPA07N65C3XKSA1 MOSFET is a through-hole mounting technology product that is categorized under discrete semiconductor products.

  • Popularity Rating: Medium
  • Supply and Demand Status: Sufficient
  • Status: Active
  • Win Source Part Number: 100445-SPA07N65C3XKSA1
  • Maximum Gate Charge: 27nC @ 10V
  • Maximum Input Capacitance: 790pF @ 25V
  • Maximum Rds On @ Id,Vgs: 600 mOhm @ 4.6A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.0984 $64.3936
9+ $13.2097 $118.8873
14+ $12.7962 $179.1468
19+ $12.3839 $235.2941
25+ $11.9704 $299.2600
33+ $10.7323 $354.1659
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,500 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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