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Same model may have multiple batches, images only for reference.
SPA11N60C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPA11N60C3XKSA1

Part No SPA11N60C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220-3
Datasheet
SPA11N60C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-31 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 099490-SPA11N60C3XKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA11N60C3XKSA1 CAD Model

Description

The SPA11N60C3XKSA1 is an N-channel MOSFET manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 33W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 11A (Tc)
  • Maximum Rds On @ Id, Vgs: 380 mOhm @ 7A, 10V
  • Category: Discrete semiconductor products
  • Popularity: Medium
  • Packaging: Tube/Rail
  • Mounting Style: Through-hole
  • Gate-Source Threshold Voltage: 3.9V @ 500μA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V

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189+ $1.8367 $347.1363
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