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Same model may have multiple batches, images only for reference.
SPA17N80 Real Image
Same model may have multiple batches, images only for reference.

SPA17N80

Part No SPA17N80
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 17A TO220FP
Datasheet
SPA17N80 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 177nC @ 10V
Max Input Capacitance 2320pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Dimension TO-220-3 Full Pack
Win Source Part Number 212015-SPA17N80
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA17N80 CAD Model

Description

The Infineon Technologies 212015-SPA17N80 is an N-channel MOSFET that is suitable for various electronic applications.

  • Popularity: medium
  • Supply and demand status: limited
  • Manufacturer: Infineon Technologies
  • Maximum Rds On @ Id,Vgs: 290 mOhm @ 11A, 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.0855 $60.5130
14+ $8.2756 $115.8584
22+ $8.0169 $176.3718
30+ $7.7581 $232.7430
39+ $7.4994 $292.4766
52+ $6.7233 $349.6116
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,790 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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