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Same model may have multiple batches, images only for reference.
SPB03N60S5ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SPB03N60S5ATMA1

Part No SPB03N60S5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.2A TO-263
Datasheet
SPB03N60S5ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 135μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 420pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101466-SPB03N60S5ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB03N60S5ATMA1 CAD Model

Description

The Infineon Technologies SPB03N60S5ATMA1 is a MOSFET electronic component that is ideal for use in various applications.

  • Packaging: Reel - TR
  • Mounting Style: SMD (SMT)
  • Power Dissipation: 38W (Tc) (Max)
  • Drain-Source Breakdown Voltage: 600V
  • Rds On @ Id, Vgs: 1.4 Ohm @ 2A, 10V (Max)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9066 $58.9290
160+ $0.7440 $119.0400
245+ $0.7206 $176.5470
335+ $0.6974 $233.6290
430+ $0.6742 $289.9060
575+ $0.6045 $347.5875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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