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SPB04N50C3ATMA1

Part No SPB04N50C3ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 560V 4.5A TO-263 / Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) D2PAK T/R
Datasheet
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 560V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.9V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 470pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 50W (Tc)
Rds On (Maximum) @ Id, Vgs 950 mOhm @ 2.8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 795282-SPB04N50C3ATMA1
Popularity Medium
Supply and Demand Status Limited
Family Name SPB04N50C3ATMA1
Introduction Date March 04, 2003
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SPB04N50C3ATMA1 CAD Model

Description

The Infineon Technologies' CoolMOS series SPB04N50C3ATMA1 is a N-channel MOSFET.

  • Package: TO-263-3, D2Pak
  • Drain-Source Voltage (Maximum): 560V
  • Continuous Drain Current: 4.5A (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 200μA
  • Gate Charge: 22nC @ 10V
  • Input Capacitance: 470pF @ 25V
  • Maximum Power Dissipation: 50W (Tc)
  • Rds On (Maximum): 950 mOhm @ 2.8A, 10V
  • Operating Temperature Range: -55°C to 150°C
  • Status: Discontinued

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1771 $58.8550
120+ $0.9658 $115.8960
190+ $0.9357 $177.7830
260+ $0.9055 $235.4300
330+ $0.8753 $288.8490
445+ $0.7847 $349.1915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,700 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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