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Same model may have multiple batches, images only for reference.
AUIRF1405ZS-7P Real Image
Same model may have multiple batches, images only for reference.

AUIRF1405ZS-7P

Part No AUIRF1405ZS-7P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 120A D2PAK-7
Datasheet
AUIRF1405ZS-7P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 5360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 88A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 139461-AUIRF1405ZS-7P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AUIRF1405ZS-7P CAD Model

Description

The AUIRF1405ZS-7P is engineered for professionals who demand high reliability and performance in their electronic components. This MOSFET is perfect for handling demanding power management tasks with ease.

Features and Benefits

  • Extended voltage range for versatile applications
  • High efficiency with low thermal output
  • Environmentally robust design

Applications

  • Automotive lighting systems
  • Robust power switching
  • Industrial control systems

The AUIRF1405ZS-7P is well-regarded for its ability to perform in challenging settings while reducing overall energy consumption.

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