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Same model may have multiple batches, images only for reference.
SPB07N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPB07N60C3

Part No SPB07N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A D2PAK
Datasheet
SPB07N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 350μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 030743-SPB07N60C3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB07N60C3 CAD Model

Description

The Infineon Technologies SPB07N60C3 is a high-quality MOSFET transistor designed for use in electronic circuits.

  • Maximum Power Dissipation: 83W
  • Drain-Source Breakdown Voltage: 650V
  • Polarity: N-channel
  • Package: PG-TO263-3-2
  • Maximum Gate Charge: 27nC @ 10V
  • Halogen-free standards: Compliant
  • Popularity: medium
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0926 $60.0930
130+ $0.8974 $116.6620
200+ $0.8686 $173.7200
275+ $0.8408 $231.2200
360+ $0.8131 $292.7160
480+ $0.7288 $349.8240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,045 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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