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Same model may have multiple batches, images only for reference.
SPB100N03S2-03 Real Image
Same model may have multiple batches, images only for reference.

SPB100N03S2-03

Part No SPB100N03S2-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A D2PAK
Datasheet
SPB100N03S2-03 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 7020pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101470-SPB100N03S2-03
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB100N03S2-03 CAD Model

Description

The Infineon Technologies SPB100N03S2-03 is an N-channel MOSFET transistor that is now obsolete.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 100A @ 25°C
  • Power Dissipation: 300W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 150nC @ 10V
  • Maximum Rds On: 3 mOhm @ 80A, 10V
  • Packaging: PG-TO263-3-2
  • Operating Temperature: -55°C to 175°C (TJ)

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