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Same model may have multiple batches, images only for reference.
SPB100N03S203T Real Image
Same model may have multiple batches, images only for reference.

SPB100N03S203T

Part No SPB100N03S203T
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A D2PAK
Datasheet
SPB100N03S203T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 7020pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 115077-SPB100N03S203T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB100N03S203T CAD Model

Description

The Infineon Technologies 115077-SPB100N03S203T MOSFET is a high-performance N-Channel transistor designed for use in various electronic applications.

  • Maximum Power Dissipation: 300W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 100A (Tc)
  • Maximum Rds On: 3 mOhm @ 80A, 10V
  • Package: PG-TO263-3-2
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 150nC @ 10V

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187+ $1.8555 $346.9785
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