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Same model may have multiple batches, images only for reference.
SPB100N04S2L-03 Real Image
Same model may have multiple batches, images only for reference.

SPB100N04S2L-03

Part No SPB100N04S2L-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A D2PAK
Datasheet
SPB100N04S2L-03 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 8000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101473-SPB100N04S2L-03
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPB100N04S2L-03 CAD Model

Description

The Infineon SPB100N04S2L-03 is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 40V and a continuous drain current of 100A (Tc).

  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Package: PG-TO263-3-2
  • Maximum Power Dissipation: 300W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 3 mOhm @ 80A, 10V
  • Supply and Demand Status: Sufficient

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