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SPB11N60C3

Part No SPB11N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 005203-SPB11N60C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB11N60C3 CAD Model

Description

The Infineon Technologies SPB11N60C3 is a high-performance N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 11A @ 25°C
  • Package: PG-TO263-3-2
  • Mounting: SMD (SMT)
  • Power Dissipation: 125W (Tc)
  • Maximum Rds On: 380 mOhm @ 7A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 500μA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and demand status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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