The SPB11N60S5ATMA1 is a high-voltage, fast-switching N-channel CoolMOS™ Power MOSFET from Infineon Technologies. This MOSFET is designed for high efficiency and power density in a variety of applications. It utilizes Infineon's advanced CoolMOS™ technology, which provides a significant reduction in on-resistance (RDS(on)) and gate charge (Qg), leading to lower conduction and switching losses.

Applications:

• Switch-mode power supplies (SMPS)
• Power factor correction (PFC)
• Uninterruptible power supplies (UPS)
• Industrial power supplies
• Lighting

Features:

• CoolMOS™ technology for low RDS(on) and gate charge
• Fast switching speed
• High avalanche ruggedness
• Integrated gate resistor
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21

Benefits:

• Increased system efficiency due to reduced power losses
• Reduced heat dissipation, allowing for smaller heat sinks and more compact designs
• Improved reliability and robustness due to high avalanche capability
• Simplified gate drive circuitry due to integrated gate resistor
• Environmentally friendly due to Pb-free and halogen-free construction

Technical Specifications:

The SPB11N60S5ATMA1 features a drain-source voltage (VDS) of 600V, a continuous drain current (ID) of 11A, and a pulsed drain current (IDpulse) of 33A. The on-resistance (RDS(on)) is typically 0.29 Ω. The gate charge (Qg) is typically 25 nC. It is available in a PG-TO263-3 package and suitable for surface mounting.

The CoolMOS™ technology implemented in this device significantly reduces conduction losses, contributing to overall efficiency improvements. The fast switching characteristics enable higher operating frequencies, which can lead to smaller and lighter power supply designs. Furthermore, the high avalanche ruggedness ensures robust operation even under demanding conditions.