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Same model may have multiple batches, images only for reference.
SPB12N50C3 Real Image
Same model may have multiple batches, images only for reference.

SPB12N50C3

Part No SPB12N50C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 560V 11.6A TO-263
Datasheet
SPB12N50C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 560V
Continuous Drain Current at 25°C 11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 49nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 137283-SPB12N50C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB12N50C3 CAD Model

Description

The Infineon Technologies SPB12N50C3 is a MOSFET transistor with N-channel polarity.

  • Power Dissipation: up to 125W
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 560V
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 7A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6043 $64.1720
90+ $1.3167 $118.5030
140+ $1.2751 $178.5140
190+ $1.2347 $234.5930
245+ $1.1931 $292.3095
325+ $1.0695 $347.5875
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Availability: 17,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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