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Same model may have multiple batches, images only for reference.
SPB160N04S2-03 Real Image
Same model may have multiple batches, images only for reference.

SPB160N04S2-03

Part No SPB160N04S2-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 160A D2PAK-7
Datasheet
SPB160N04S2-03 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 7320pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.9 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-7-3
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 065919-SPB160N04S2-03
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB160N04S2-03 CAD Model

Description

The Infineon Technologies SPB160N04S2-03 is an N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 160A (Tc)
  • Package: PG-TO263-7-3
  • Dimension: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Maximum Rds On @ Id,Vgs: 2.9 mOhm @ 80A, 10V
  • Status: obsolete (EOL)
  • Popularity: medium

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