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Same model may have multiple batches, images only for reference.
SPB160N04S2L03DTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPB160N04S2L03DTMA1

Part No SPB160N04S2L03DTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 160A D2PAK-7
Datasheet
SPB160N04S2L03DTMA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 8000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-7-3
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 1101478-SPB160N04S2L03DTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB160N04S2L03DTMA1 CAD Model

Description

The Infineon Technologies SPB160N04S2L03DTMA1 is a MOSFET transistor designed for use in various electronic applications.

  • Channel: N-Channel
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 160A @ 25°C
  • Maximum Rds On: 2.7 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 230nC @ 10V
  • Maximum Input Capacitance: 8000pF @ 25V
  • Package: PG-TO263-7-3
  • Dimension: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Supply and Demand Status: Balanced

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