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Same model may have multiple batches, images only for reference.
SPB21N50C3 Real Image
Same model may have multiple batches, images only for reference.

SPB21N50C3

Part No SPB21N50C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 560V 21A TO-263
Datasheet
SPB21N50C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 560V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 13.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 030745-SPB21N50C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name SPB21N50C3
Introduction Date March 04, 2003
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SPB21N50C3 CAD Model

Description

The SPB21N50C3 MOSFET transistor from Infineon Technologies is a popular choice for discrete semiconductor products.

  • Maximum Power Dissipation: 208W
  • Transistor Type: N-Channel
  • Drain-Source Breakdown Voltage: 560V
  • Continuous Drain Current: 21A @ 25°C
  • Gate-Source Threshold Voltage: 3.9V @ 1mA
  • Maximum Gate Charge: 95nC @ 10V
  • Popularity: High
  • Supply and Demand Status: Limited

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Quantity Unit Price Ext. Price
45+ $1.3872 $62.4240
105+ $1.1388 $119.5740
160+ $1.1030 $176.4800
220+ $1.0672 $234.7840
280+ $1.0314 $288.7920
375+ $0.9252 $346.9500
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Availability: 7,075 pieces
MOQ: 45 pcs
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