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Same model may have multiple batches, images only for reference.
SPB80N03S2L06T Real Image
Same model may have multiple batches, images only for reference.

SPB80N03S2L06T

Part No SPB80N03S2L06T
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A D2PAK
Datasheet
SPB80N03S2L06T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 80μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 2530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101488-SPB80N03S2L06T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB80N03S2L06T CAD Model

Description

The Infineon Technologies SPB80N03S2L06T MOSFET is a surface-mount N-channel transistor with a drain-source breakdown voltage of 30V and a continuous drain current @ 25°C of 80A.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 80A @ 25°C
  • Power Dissipation: 150W
  • Gate-Source Threshold Voltage: 2V
  • Maximum Gate Charge: 68nC @ 10V
  • Package: PG-TO263-3-2
  • Maximum Rds On @ Id,Vgs: 5.9 mOhm @ 80A, 10V
  • Supply and Demand Status: Balanced

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