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Same model may have multiple batches, images only for reference.
SPB80N04S2-H4 Real Image
Same model may have multiple batches, images only for reference.

SPB80N04S2-H4

Part No SPB80N04S2-H4
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A D2PAK
Datasheet
SPB80N04S2-H4 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 148nC @ 10V
Max Input Capacitance 5890pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 092204-SPB80N04S2-H4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB80N04S2-H4 CAD Model

Description

The Infineon Technologies 092204-SPB80N04S2-H4 is an N-channel MOSFET with a power dissipation of 300W (Tc).

  • Power Dissipation: 300W (Tc)
  • Category: Discrete Semiconductor Products
  • Product Status: obsolete
  • Supply and Demand Status: Limited
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 4 mOhm @ 80A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8281 $57.9670
170+ $0.6803 $115.6510
265+ $0.6584 $174.4760
365+ $0.6376 $232.7240
470+ $0.6156 $289.3320
630+ $0.5521 $347.8230
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Availability: 5,350 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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