The Infineon Technologies 338395-SPD02N50C3 is a CoolMOS™ series power transistor with an N-Channel MOSFET technology.

• Drain to source voltage (Vdss): 560 V
• Continuous drain current (Id): 1.8A @ 25°C
• On-resistance (Rds On): 3 Ohm @ a drain current of 1.1A and a gate-source voltage of 10V
• Gate threshold voltage (Vgs(th)): 3.9V @ a drain current of 80μA
• Maximum power dissipation: 25W
• Suitable for: high-power applications
• Package: TO-252-3, DPak package and is designed for surface mount installation
• Product status: obsolete product but still available in the market
• Gate charge (Qg): 9 nC @ a gate-source voltage of 10V
• Input capacitance (Ciss): 190 pF @ a drain-source voltage of 25V