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Same model may have multiple batches, images only for reference.
SPA06N60C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPA06N60C3

Part No SPA06N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 6.2A TO-220
Datasheet
SPA06N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 260μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 3.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 212012-SPA06N60C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA06N60C3 CAD Model

Description

The Infineon Technologies SPA06N60C3 is an N-channel MOSFET that is commonly used in various applications.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 6.2A
  • Maximum Power Dissipation: 32W
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0272 $61.6320
140+ $0.8428 $117.9920
215+ $0.8165 $175.5475
295+ $0.7902 $233.1090
380+ $0.7638 $290.2440
510+ $0.6848 $349.2480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,800 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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