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SPD03N60C3ATMA1

Part No SPD03N60C3ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.2A TO252-3  /  N-Channel 600 V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V
Power Dissipation (Max) 38W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3-1
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SPD03N60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-SPD03N60C3ATMA1CT,448-SPD03N60C3ATMA1DKR,SPD03N60C3ATMA1-ND,448-SPD03N60C3ATMA1TR,SP001117760
Standard Package 2,500
Win Source Part Number 966612-SPD03N60C3ATMA1
Ultra Librarian 3D Model Ultra Librarian SPD03N60C3ATMA1 CAD Model

Description

The SPD03N60C3ATMA1 is a single MOSFET transistor manufactured by Infineon Technologies.

  • Packaging: Tape and Reel
  • Mounting: SMD (SMT)
  • FET Type: N-Channel
  • Drain to Source Voltage: 600V
  • Current-Continuous Drain: 3.2A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
  • Power Dissipation: Up to 38W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9171 $59.6115
155+ $0.7525 $116.6375
240+ $0.7290 $174.9600
330+ $0.7055 $232.8150
425+ $0.6821 $289.8925
570+ $0.6115 $348.5550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,080 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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