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Same model may have multiple batches, images only for reference.
SPD08P06PGBTMA1 Real Image
Same model may have multiple batches, images only for reference.

SPD08P06PGBTMA1

Part No SPD08P06PGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 8.83A 3TO252
Datasheet
SPD08P06PGBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8.83A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6.2V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 420pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 10A, 6.2V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 116963-SPD08P06PGBTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD08P06PGBTMA1 CAD Model

Description

The Infineon Technologies 116963-SPD08P06PGBTMA1 MOSFET is a P-channel device with a drain-source breakdown voltage of 60V and a continuous drain current of 8.83A @ 25°C.

  • Maximum Power Dissipation: 42W
  • Maximum Rds On: 300 mOhm @ 10A and 6.2V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Suitable for: use in various applications such as power management, battery protection, and DC-DC converters.
  • Package: TO-252-3 package ensures easy mounting and installation.

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Quantity Unit Price Ext. Price
105+ $0.5514 $57.8970
260+ $0.4525 $117.6500
400+ $0.4384 $175.3600
545+ $0.4243 $231.2435
705+ $0.4100 $289.0500
945+ $0.3677 $347.4765
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