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Same model may have multiple batches, images only for reference.
SPD30N06S2-23 Real Image
Same model may have multiple batches, images only for reference.

SPD30N06S2-23

Part No SPD30N06S2-23
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 1250pF @ 25V
Maximum Gate-Source Voltage ±20V
Maximum Rds On at Id,Vgs 23 mOhm @ 21A, 10V
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 065928-SPD30N06S2-23
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD30N06S2-23 CAD Model

Description

The Infineon Technologies SPD30N06S2-23 is a MOSFET that is designed for use in electronic devices.

  • Package: P-TO252-3
  • Mounting Type: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Rds On at Id,Vgs: 23 mOhm @ 21A, 10V
  • Status: Obsolete (EOL)
  • Supply: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7898 $59.2350
180+ $0.6481 $116.6580
280+ $0.6279 $175.8120
385+ $0.6075 $233.8875
495+ $0.5874 $290.7630
660+ $0.5266 $347.5560
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Availability: 6,090 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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