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Same model may have multiple batches, images only for reference.
SPD30N08S2-22 Real Image
Same model may have multiple batches, images only for reference.

SPD30N08S2-22

Part No SPD30N08S2-22
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 30A DPAK
Datasheet
SPD30N08S2-22 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 80μA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 1950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 21.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 065930-SPD30N08S2-22
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPD30N08S2-22 CAD Model

Description

The SPD30N08S2-22 is an N-channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 30A @ 25°C
  • Maximum Rds On at Id,Vgs: 21.5 mOhm @ 25A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 80μA
  • Maximum Gate Charge: 57nC @ 10V
  • Maximum Input Capacitance: 1950pF @ 25V
  • Packaging: P-TO252-3
  • Status: Obsolete (EOL)
  • Supply and demand status: Sufficient

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