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Same model may have multiple batches, images only for reference.
SPI07N60S5HKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPI07N60S5HKSA1

Part No SPI07N60S5HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.3A TO-262
Datasheet
SPI07N60S5HKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 350μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 970pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1101564-SPI07N60S5HKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPI07N60S5HKSA1 CAD Model

Description

The Infineon Technologies SPI07N60S5HKSA1 is an N-channel MOSFET with a drain-source breakdown voltage of 600V and a maximum continuous drain current of 7.3A @ 25°C.

  • Rds On (Max): 600 mOhm @ 4.6A, 10V
  • Package: PG-TO262-3-1
  • Mounting: Through Hole
  • Operating Temperature: -55°C to 150°C (TJ)

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