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Same model may have multiple batches, images only for reference.
SPI07N65C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPI07N65C3

Part No SPI07N65C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO-262
Datasheet
SPI07N65C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 350μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 065935-SPI07N65C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPI07N65C3 CAD Model

Description

The SPI07N65C3 is an N-channel MOSFET from Infineon Technologies.

  • GPTDescription: It is designed for use in discrete semiconductor products.
  • GPTDescription: The device is mounted in a PG-TO262-3-1 package and is through-hole mountable.
  • GPTDescription: It has a drain-source breakdown voltage of 650V and a continuous drain current of 7.3A @ 25°C.
  • GPTDescription: The gate-source threshold voltage is 3.9V @ 350μA, and the maximum gate charge is 27nC @ 10V.
  • GPTDescription: The device operates in a temperature range of -55°C to 150°C.
  • GPTDescription: The supply and demand status is limited, and the product is obsolete.

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