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SPI11N60C3XKSA1

Part No SPI11N60C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 137061-SPI11N60C3XKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPI11N60C3XKSA1 CAD Model

Description

The Infineon Technologies 345827 is an N-Channel MOSFET designed for use in discrete semiconductor applications.

  • GPTDescription: It features a drain-source breakdown voltage of 650V and a continuous drain current of 11A @ 25°C.
  • GPTDescription: The device is packaged in a PG-TO262-3-1 case and can operate over a temperature range of -55°C to 150°C.
  • GPTDescription: It has a maximum Rds On of 380 mOhm @ 7A and 10V.
  • GPTDescription: It is suitable for use in power electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0293 $60.8790
70+ $1.6655 $116.5850
110+ $1.6135 $177.4850
150+ $1.5616 $234.2400
195+ $1.5096 $294.3720
260+ $1.3525 $351.6500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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