The Infineon Technologies 065938-SPI11N60S5 is an N-channel MOSFET transistor with a maximum power dissipation of 125W (Tc).

• GPTDescription: It is packaged in a PG-TO262-3-1 and is mounted through through-hole technology.
• GPTDescription: This electronic component is categorized under discrete semiconductor products and has an obsolete (EOL) status.
• GPTDescription: The Infineon Technologies 065938-SPI11N60S5 has a temperature range of -55°C to 150°C (TJ) and a drain-source breakdown voltage of 600V.
• GPTDescription: It has a continuous drain current of 11A (Tc) and a gate-source threshold voltage of 5.5V @ 500μA.
• GPTDescription: This MOSFET transistor has a maximum gate charge of 54nC @ 10V, a maximum input capacitance of 1460pF @ 25V, and a maximum Rds On @ Id,Vgs of 380 mOhm @ 7A, 10V.