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SPI16N50C3HKSA1

Part No SPI16N50C3HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
Power Dissipation (Max) 160W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI16N
Other Names SPI16N50C3,SPI16N50C3X,SPI16N50C3IN,SP000014470,SPI16N50C3IN,SP000681004,SPI16N50C3,SPI16N50C3XK
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278345-SPI16N50C3HKSA1
Ultra Librarian 3D Model Ultra Librarian SPI16N50C3HKSA1 CAD Model

Description

The Infineon Technologies SPD04N80C3BTMA1 is an N-Channel MOSFET designed for use in power management, computers and computer peripherals, and industrial applications.

  • Drain to Source Voltage: 560V
  • Continuous Drain Current: 16A (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Mounting: Through hole technology
  • Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
  • Rds On at Id,Vgs: 2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand Status: Limited
  • Status: Obsolete

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