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Same model may have multiple batches, images only for reference.
SPN02N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPN02N60C3

Part No SPN02N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 0.4A SOT-223
Datasheet
SPN02N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 80μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 102624-SPN02N60C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPN02N60C3 CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel device with a maximum power dissipation of 1.8W (Ta).

  • Supply and Demand Status: Sufficient
  • Component Category: Designed for discrete semiconductor products
  • Mounting Technology: SMD (SMT)
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Win Source Part Number: 102624-SPN02N60C3

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3985 $57.7825
355+ $0.3269 $116.0495
550+ $0.3165 $174.0750
755+ $0.3061 $231.1055
980+ $0.2957 $289.7860
1,305+ $0.2657 $346.7385
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Availability: 36,600 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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