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Same model may have multiple batches, images only for reference.
SPN03N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPN03N60C3

Part No SPN03N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 0.7A SOT-223
Datasheet
SPN03N60C3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 135μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1101612-SPN03N60C3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPN03N60C3 CAD Model

Description

The Infineon Technologies SPN03N60C3 is an N-channel MOSFET that is packaged in a PG-SOT223-4.

  • Package: PG-SOT223-4
  • Channel Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 700mA
  • Gate-Source Threshold Voltage: 3.9V @ 135μA
  • Maximum Gate Charge: 17nC @ 10V
  • Maximum Input Capacitance: 400pF @ 25V
  • Maximum Rds On @ Id,Vgs: 1.4 Ohm @ 2A, 10V
  • Maximum Power Dissipation: 1.8W (Ta)
  • Application: Discrete semiconductor products
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3708 $59.3280
385+ $0.3038 $116.9630
590+ $0.2945 $173.7550
810+ $0.2853 $231.0930
1,050+ $0.2760 $289.8000
1,405+ $0.2472 $347.3160
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Availability: 20,300 pieces
MOQ: 160 pcs
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