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Same model may have multiple batches, images only for reference.
SPP100N03S2-03 Real Image
Same model may have multiple batches, images only for reference.

SPP100N03S2-03

Part No SPP100N03S2-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A TO-220AB
Datasheet
SPP100N03S2-03 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 7020pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101616-SPP100N03S2-03
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP100N03S2-03 CAD Model

Description

The Infineon Technologies SPP100N03S2-03 is a N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 100A @ 25°C.

  • Maximum Power Dissipation: 300W (Tc)
  • Maximum Rds On @ Id,Vgs: 3.3 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 150nC @ 10V
  • Maximum Input Capacitance: 7020pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO220-3-1

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Quantity Unit Price Ext. Price
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75+ $1.6482 $123.6150
110+ $1.5974 $175.7140
150+ $1.5454 $231.8100
195+ $1.4946 $291.4470
260+ $1.3398 $348.3480
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