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Same model may have multiple batches, images only for reference.
SPP11N65C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP11N65C3XKSA1

Part No SPP11N65C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPP11N65C3XKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP11N
Other Names SPP11N65C3XK,SPP11N65C3IN,SP000681046,SPP11N65C3BKSA1,SPP11N65C3,SPP11N65C3,SPP11N65C3X,SPP11N65C3IN
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278331-SPP11N65C3XKSA1
Ultra Librarian 3D Model Ultra Librarian SPP11N65C3XKSA1 CAD Model

Description

The SPP11N65C3XKSA1 is a CoolMOS™ N-channel MOSFET transistor with a drain to source voltage of 650V and a continuous drain current of 11A (Tc).

  • On-Resistance: 380mOhm @ 7A and 10V
  • Gate Charge (Qg): 60nC @ 10V
  • Input Capacitance (Ciss): 1200pF @ 25Vds
  • Mounting Type: Through-hole
  • Package: TO-220-3
  • Power Dissipation: 125W @ Tc
  • Manufacturer: Infineon Technologies
  • Status: Obsolete

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