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Same model may have multiple batches, images only for reference.
SPP11N80C3XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPP11N80C3XKSA1

Part No SPP11N80C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPP11N80C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 100 V
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Other Names 2156-SPP11N80C3XKSA1-448
Standard Package 1
REACH Status REACH Unaffected
Win Source Part Number 1278370-SPP11N80C3XKSA1
Ultra Librarian 3D Model Ultra Librarian SPP11N80C3XKSA1 CAD Model

Description

The Infineon Technologies SPP11N80C3XKSA1 is a CoolMOS™ MOSFET transistor with an N-channel polarity.

  • Manufacturer: Infineon Technologies
  • MOSFET Type: CoolMOS™
  • Polarity: N-channel
  • Maximum Power Dissipation: 156W
  • Drain-Source Voltage: 800V
  • Win Source Part Number: 1278370
  • Mounting Type: Through hole
  • Drive Voltage: Up to 10V

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