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SPP15N65C3

Part No SPP15N65C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 9.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 065963-SPP15N65C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP15N65C3 CAD Model

Description

The Infineon Technologies SPP15N65C3 is a MOSFET discrete semiconductor product with a polarity of N-Channel.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 15A (Tc)
  • Power Dissipation (max): 156W (Tc)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7221 $60.2735
85+ $1.4126 $120.0710
130+ $1.3687 $177.9310
175+ $1.3248 $231.8400
230+ $1.2809 $294.6070
305+ $1.1481 $350.1705
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,070 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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