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SPP15P10PGHKSA1

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Part No	SPP15P10PGHKSA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SPP15P10PGHKSA1 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	SIPMOS®
Package	Tube
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	240mOhm @ 10.6A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1280 pF @ 25 V
Power Dissipation (Max)	128W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Base Product Number	SPP15P
Other Names	SPP15P10P G,SPP15P10P G,SP000212313
Standard Package	500
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1278261-SPP15P10PGHKSA1
Ultra Librarian 3D Model	Ultra Librarian SPP15P10PGHKSA1 CAD Model

Alternative Products

Description

The Infineon Technologies 1278261-SPP15P10PGHKSA1 is a P-channel MOSFET transistor that belongs to the SIPMOS series.

Package: TO-220-3
Drain-to-Source Voltage: 100V
Continuous Drain Current: 15A (Tc) @ 25°C
Maximum Rds On: 240mOhm @ 10.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Power Dissipation (Max): 128W (Tc)
Drive Voltage: 10V (Max Rds On, Min Rds On)
Application: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single

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