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NP55N055SDG-E1-AY

Part No NP55N055SDG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 55A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 96nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4800pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.2W (Ta), 77W (Tc)
Rds On (Maximum) @ Id, Vgs 9.5 mOhm @ 28A, 10V
Operating Temperature Range 175°C (TJ)
Mounting SMD
Manufacturer Package TO-252 (MP-3ZK)
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 764051-NP55N055SDG-E1-AY
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NP55N055SDG-E1-AY CAD Model

Description

{"ProductId":702429,"FormattedDescription":"

The Renesas Electronics America MOSFET is a high-performance electronic component that is ideal for use in a range of applications.

  • Continuous Drain Current @ 25°C: 55A
  • Operating Temperature: Up to 175°C
  • Package: TO-252-3, DPak (SMD)
  • Maximum Drain-Source Voltage: 55V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Power Dissipation: 1.2W (Ta), 77W (Tc)
  • Maximum Rds On: 9.5 mOhm @ 28A, 10V
  • Status: Obsolete (EOL)
"}

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4389 $59.2515
325+ $0.3604 $117.1300
500+ $0.3488 $174.4000
685+ $0.3373 $231.0505
890+ $0.3257 $289.8730
1,190+ $0.2922 $347.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300,008 pieces
In Stock: 300,000 pieces Factory Stock: 8 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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