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Same model may have multiple batches, images only for reference.
SPP15P10PLHXKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP15P10PLHXKSA1

Part No SPP15P10PLHXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPP15P10PLHXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series SIPMOS®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id 2V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1490 pF @ 25 V
Power Dissipation (Max) 128W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number SPP15P10
Other Names SPP15P10PL H,SPP15P10PLH,SP000683162,SPP15P10PL H
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278271-SPP15P10PLHXKSA1
Ultra Librarian 3D Model Ultra Librarian SPP15P10PLHXKSA1 CAD Model

Description

The 1278271-SPP15P10PLHXKSA1 is a P-channel MOSFET transistor from the SIPMOS series.

  • Maximum Drain-Source Voltage: 100V
  • Maximum Continuous Drain Current @ 25°C: 15A
  • Maximum On-Resistance: 200mOhm @ 11.3A and 10V
  • Gate Threshold Voltage: 2V @ a drain current of 1.54mA
  • Maximum Power Dissipation: 128W @ a case temperature of 25°C
  • Mounting Type: Through-hole
  • Package: TO-220-3
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2176 $57.9168
44+ $2.6401 $116.1644
68+ $2.5576 $173.9168
94+ $2.4751 $232.6594
121+ $2.3926 $289.5046
162+ $2.1451 $347.5062
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MOQ: 18 pcs
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