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Same model may have multiple batches, images only for reference.
SPP47N10 Real Image
Same model may have multiple batches, images only for reference.

SPP47N10

Part No SPP47N10
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 47A TO-220
Datasheet
SPP47N10 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 2mA
Max Gate Charge 105nC @ 10V
Max Input Capacitance 2500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 175W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101626-SPP47N10
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPP47N10 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-Channel electronic component that is designed for use in various applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 47A @ 25°C
  • Maximum Rds on at Id, Vgs: 33 mOhm @ 33A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 2mA
  • Maximum Input Capacitance: 2500pF @ 25V
  • Maximum Gate Charge: 105nC @ 10V
  • Package: PG-TO220-3-1
  • Mounting Technology: Through-Hole
  • Power Dissipation: 175W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Sufficient

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