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Same model may have multiple batches, images only for reference.
SI4493DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4493DY-T1-E3

Part No SI4493DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 10A 8SOIC
Datasheet
SI4493DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 110nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 7.75 mOhm @ 14A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064495-SI4493DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4493DY-T1-E3 CAD Model

Description

The Vishay SI4493DY-T1-E3 is a P-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 10A (Ta)
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On: 7.75 mOhm @ 14A, 4.5V
  • Case/Package: 8-SOIC (0.154", 3.90mm Width)
  • Operating Temperatures: -55°C to 150°C (TJ)
  • Supply: Limited

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