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SPP80N06S08AKSA1

Part No SPP80N06S08AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 187nC @ 10V
Max Input Capacitance 3660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101634-SPP80N06S08AKSA1
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Consumer Electronics, Portable Devices, Industrial
Ultra Librarian 3D Model Ultra Librarian SPP80N06S08AKSA1 CAD Model

Description

The SPP80N06S08AKSA1 is an N-Channel MOSFET that is ideal for use in power management, consumer electronics, portable devices, and industrial applications.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Package: PG-TO220-3-1
  • Maximum Rds On at Id, Vgs: 8 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 187nC @ 10V
  • Maximum Input Capacitance: 3660pF @ 25V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8686 $65.4010
80+ $1.5333 $122.6640
120+ $1.4853 $178.2360
165+ $1.4374 $237.1710
210+ $1.3895 $291.7950
280+ $1.2458 $348.8240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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