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Same model may have multiple batches, images only for reference.
SPP80N06S2-H5 Real Image
Same model may have multiple batches, images only for reference.

SPP80N06S2-H5

Part No SPP80N06S2-H5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220
Datasheet
SPP80N06S2-H5 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 230μA
Max Gate Charge 155nC @ 10V
Max Input Capacitance 5500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101637-SPP80N06S2-H5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP80N06S2-H5 CAD Model

Description

The Infineon Technologies 439548 is a high-performance N-channel MOSFET designed for use in various electronic applications.

  • Package: TO-220-3
  • Maximum Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 230μA
  • Maximum Gate Charge: 155nC @ 10V
  • Maximum Rds On @ Id,Vgs: 5.5 mOhm @ 80A, 10V
  • Status: Obsolete(EOL)
  • Operating Temperature: -55°C to 175°C (TJ)

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