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Same model may have multiple batches, images only for reference.
SPU04N60S5 Real Image
Same model may have multiple batches, images only for reference.

SPU04N60S5

Part No SPU04N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.5A TO-251
Datasheet
SPU04N60S5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 200μA
Max Gate Charge 22.9nC @ 10V
Max Input Capacitance 580pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 065979-SPU04N60S5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPU04N60S5 CAD Model

Description

The SPU04N60S5 is an N-channel MOSFET electronic component manufactured by Infineon Technologies.

  • Package: PG-TO251-3
  • Mounting: Through-hole
  • Power Dissipation: 50W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 4.5A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 200μA
  • Maximum Gate Charge: 22.9nC @ 10V
  • Maximum Input Capacitance: 580pF @ 25V
  • Maximum Rds On @ Id, Vgs: 950 mOhm @ 2.8A, 10V
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6724 $60.5160
210+ $0.5519 $115.8990
325+ $0.5345 $173.7125
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4484 $347.5100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,940 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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