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SPW15N60C3

Part No SPW15N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 9.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 065983-SPW15N60C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPW15N60C3 CAD Model

Description

The Infineon Technologies SPW15N60C3 MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 650V and continuous drain current of 15A @ 25°C.

  • Maximum Rds On @ Id, Vgs: 280 mOhm @ 9.4A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 675μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1660pF @ 25V
  • Power Dissipation: 156W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: PG-TO247-3
  • Mounting: Through hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.2134 $58.9876
34+ $3.4569 $117.5346
52+ $3.3495 $174.1740
72+ $3.2409 $233.3448
93+ $3.1335 $291.4155
124+ $2.8090 $348.3160
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Availability: 30,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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