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Same model may have multiple batches, images only for reference.
SPW20N60S5 Real Image
Same model may have multiple batches, images only for reference.

SPW20N60S5

Part No SPW20N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO-247
Datasheet
SPW20N60S5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 1mA
Max Gate Charge 103nC @ 10V
Max Input Capacitance 3000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 212045-SPW20N60S5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name SPW20N60S5
Introduction Date March 01, 1999
ECCN EAR99
Country of Origin China, Philippines
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian SPW20N60S5 CAD Model

Description

The Infineon Technologies 212045-SPW20N60S5 MOSFET is a N-channel polarity through-hole device with a drain-source breakdown voltage of 600V and a maximum continuous drain current of 20A (Tc) @ 25°C.

  • Maximum Power Dissipation: 208W (Tc)
  • Maximum Rds On: 190 mOhm @ 13A, 10V
  • Gate-Source Threshold Voltage: 5.5V @ 1mA
  • Maximum Gate Charge: 103nC @ 10V
  • Suitable for: Discrete semiconductor products
  • Package: PG-TO247-3 case with dimension TO-247-3
  • Status: Obsolete (EOL)
  • Popularity: High
  • Alternative Parts: APT20N60BC3, APT20N60BC3G, and IXKH20N60C5

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